IPG20N06S4L-26 optimos ? -t2 power-transistor features ? dual n-channel logic level - enhancement mode ? aec q101 qualified ? msl1 up to 260c peak reflow ? 175c operating temperature ? green product (rohs compliant) ? 100% avalanche tested maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current one channel active i d t c =25 c, v gs =10 v 1) 20 a t c =100 c, v gs =10 v 2) 18 pulsed drain current 2) one channel active i d,pulse - 80 avalanche energy, single pulse 2, 4) e as i d =10a 35 mj avalanche current, single pulse 4) i as - 15 a gate source voltage v gs - 16 v power dissipation one channel active p tot t c =25 c 33 w operating and storage temperature t j , t stg - -55 ... +175 c value v ds 60 v r ds(on),max 4) 26 m w i d 20 a product summary type package marking IPG20N06S4L-26 pg-tdson-8-4 4n06l26 pg-tdson-8-4 rev. 1.0 page 1 2010-10-15
IPG20N06S4L-26 parameter symbol conditions unit min. typ. max. thermal characteristics 2) thermal resistance, junction - case r thjc - - - 4.5 k/w smd version, device on pcb r thja minimal footprint - 100 - 6 cm 2 cooling area 3) - 60 - electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d = 1 ma 60 - - v gate threshold voltage v gs(th) v ds = v gs , i d = 10a 1.2 1.7 2.2 zero gate voltage drain current 4) i dss v ds =60 v, v gs =0 v, t j =25 c - 0.01 1 a v ds =60 v, v gs =0 v, t j =125 c 2) - 5 100 gate-source leakage current 4) i gss v gs =16 v, v ds =0 v - - 100 na drain-source on-state resistance 4) r ds(on) v gs =4.5 v, i d =10 a - 31 46 m w v gs =10 v, i d =17 a - 21 26 values rev. 1.0 page 2 2010-10-15
IPG20N06S4L-26 parameter symbol conditions unit min. typ. max. dynamic characteristics 2) input capacitance 4) c iss - 1100 1430 pf output capacitance 4) c oss - 300 390 reverse transfer capacitance 4) c rss - 18 36 turn-on delay time t d(on) - 5 - ns rise time t r - 1.5 - turn-off delay time t d(off) - 18 - fall time t f - 10 - gate charge characteristics 2, 4) gate to source charge q gs - 4.3 5.6 nc gate to drain charge q gd - 1.7 3.4 gate charge total q g - 15 20 gate plateau voltage v plateau - 3.9 - v reverse diode diode continous forward current 2) one channel active i s - - 20 a diode pulse current 2) one channel active i s,pulse - - 80 diode forward voltage v sd v gs =0 v, i f =17 a, t j =25 c - 0.95 1.3 v reverse recovery time 2) t rr v r =30 v, i f = i s , d i f /d t =100 a/s - 33 - ns reverse recovery charge 2, 4) q rr - 30 - nc 4) per channel t c =25 c values v gs =0 v, v ds =25 v, f =1 mhz v dd =30 v, v gs =10 v, i d =20 a, r g =11 w v dd =48 v, i d =20 a, v gs =0 to 10 v 2) specified by design. not subject to production test. 3) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. 1) current is limited by bondwire; with an r thjc = 4.5k/w the chip is able to carry 26.6a at 25c. rev. 1.0 page 3 2010-10-15
IPG20N06S4L-26 1 power dissipation 2 drain current p tot = f( t c ); v gs 6 v ; o n e c h a n n e l a c t i v e i d = f( t c ); v gs 6 v ; o n e c h a n n e l a c t i v e 3 safe operating area 4 max. transient thermal impedance i d =f( v ds ); t c =25c; d =0; one channel active z thjc = f( t p ) parameter: t p parameter: d = t p / t 1 s 10 s 100 s 1 ms 0.1 1 10 100 0.1 1 10 100 v ds [v] i d [ a ] single pulse 0.01 0.05 0.1 0.5 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 -6 10 1 10 0 10 -1 10 -2 t p [s] z t h j c [ k / w ] 0 5 10 15 20 25 30 35 0 50 100 150 200 t c [c] p t o t [ w ] 0 5 10 15 20 25 0 50 100 150 200 t c [c] i d [ a ] rev. 1.0 page 4 2010-10-15
IPG20N06S4L-26 5 typ. output characteristics 4) 6 typ. drain-source on-state resistance 4) i d = f( v ds ); t j = 25 c r ds(on) = f( i d ); t j = 25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 4) 8 typ. drain-source on-state resistance 4) i d = f( v gs ); v ds = 6v r ds(on) = f( t j ); i d = 17 a; v gs = 10 v parameter: t j 10 15 20 25 30 35 40 -60 -20 20 60 100 140 180 t j [c] r d s ( o n ) [ m w ] 3.5 v 4 v 4.5 v 5 v 5.5 v 10 v 0 20 40 60 80 0 1 2 3 4 5 v ds [v] i d [ a ] 3.5 v 4 v 4.5 v 5 v 5.5 v 10 20 30 40 50 60 70 0 20 40 60 80 i d [a] r d s ( o n ) [ m w ] -55 c 25 c 175 c 0 20 40 60 80 1 2 3 4 5 6 7 v gs [v] i d [ a ] 10v rev. 1.0 page 5 2010-10-15
IPG20N06S4L-26 9 typ. gate threshold voltage 10 typ. capacitances 4) v gs(th) = f( t j ); v gs = v ds c = f( v ds ); v gs = 0 v; f = 1 mhz parameter: i d 11 typical forward diode characteristicis 4) 12 avalanche characteristics 4) if = f(v sd ) i a s = f( t av ) parameter: t j parameter: t j(start) 25 c 100 c 150 c 0.1 1 10 100 1 10 100 1000 t av [s] i a v [ a ] 25 c 175 c 10 2 10 1 10 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd [v] i f [ a ] 10a 100a 0 0.5 1 1.5 2 2.5 -60 -20 20 60 100 140 180 t j [c] v g s ( t h ) [ v ] ciss coss crss 10 4 10 1 10 2 10 3 0 5 10 15 20 25 30 v ds [v] c [ p f ] rev. 1.0 page 6 2010-10-15
IPG20N06S4L-26 13 avalanche energy 4) 14 drain-source breakdown voltage e as = f( t j ), i d = 10a v br(dss) = f( t j ); i d = 1 ma 15 typ. gate charge 4) 16 gate charge waveforms v gs = f( q gate ); i d = 20 a pulsed parameter: v dd v gs q gate v g s(th) q g (th) q g s q g d q sw q g 55 57 59 61 63 65 -60 -20 20 60 100 140 180 t j [c] v b r ( d s s ) [ v ] 12v 48 v 0 2 4 6 8 10 12 0 3 6 9 12 15 q gate [nc] v g s [ v ] 0 8 16 24 32 40 25 50 75 100 125 150 175 t j [c] e a s [ m j ] rev. 1.0 page 7 2010-10-15
IPG20N06S4L-26 published by infineon technologies ag 81726 munich, germany ? infineon technologies ag 2010 all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. rev. 1.0 page 8 2010-10-15
IPG20N06S4L-26 revision history version revision 1.0 date 15.10.2010 changes data sheet revision 1.0 rev. 1.0 page 9 2010-10-15
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